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Aist Ibaraki Jpn | 論文
- Binding Energies of Amorphous CN and SiCN Films on X-Ray Photoelectron Spectroscopy : Surfaces, Interfaces, and Films
- The Fraction of Sp^3 Bonding in Carbon Thin Film Prepared Using Pulsed Laser Deposition
- Formation of Cubic Phase Carbon Nitride Solid by Low Energy Nitrogen Implantation into Graphite
- Emission and focusing characteristics of volcano-structured double-gated field emitter arrays
- Nanoscale Evaluation of Structure and Surface Potential of Gated Field Emitters by Scanning Maxwell-Stress Microscope
- Fabrication of Cantilever with Ultrasharp and High-Aspect-Ratio Stylus for Scanning Maxwell-Stress Microscopy
- Growth and Characterization of Compositionally Graded (Ca, Sr)F_2 Layers on Si(111) Substrates
- Control of Crystal Orientations in Lattice-Mismatched SrF_2 and (Ca, Sr)F_2 Films on Si Substrates by Intermediate CaF_2 Films
- Close Observation of the Geometrical Features of an Ultranarrow Silicon Nanowire Device
- Fabrication of 40-150 nm Gate Length Ultrathin n-MOSFETs Using Epitaxial Layer Transfer SOI Wafers
- Fabrication of 40-150nm Gate Length Ultrathin n-MOSFETs Using ELTRAN SOI Wafers
- Carrier Transport Mechanisms of InSe p-n Homojunction : Semiconductors and Semiconductor Devices
- Annealing Behavior of Zn-Doped p-Type InSe
- Photoconductivity and Photo-Hall Effect of p-Type InSe Single Crystals
- Optical Absorption Edge in γ-InSe(Excitons and Phonons)
- Quarter-Micron Interconnection Technologies for 256-Mbit Dynamic Random Access Memories
- Development of Integrated Direct Current Superconducting Quantum Interference Device Gradiometer for Nondestructive Evaluation
- Fabrication of Metal-Oxide-Semiconductor Field-Effect-Transistor-Structured Silicon Field Emitters with a Polysilicon Dual Gate
- Fabrication of a New Si Field Emitter Tip with Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Structure
- A New Metal-Oxide-Semiconductor Field-Effect-Transistor-Structured Si Field Emitter Tip