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Advanced Technology Research Laboratories Sharp Corporation | 論文
- Super-Resolution Read-Only Memory Disk with Metal Nanoparticles or Small Aperture
- D-4 Manufacturing Technology of High Resolution Probes for NDT
- Enhancement of Ultrasonic Testing Equipment Time Based Resolution by Synthetic Waveform Generator : Ultrasonic Microscopy and Nondestructive Testing
- Influence of N_2O Oxynitridation on Interface Trap Generation in Surface-Channel p-Channel Metal Oxide Semiconductor Field Effect Transistors
- Influence of N_2O-Oxynitridation on Interface Trap Generation in Surface-Channel PMOSFETs
- Thickness Dependence of Furnace N_2O-Oxynitridation Effects on Breakdown of Thermal Oxides
- Novel Low Leakage and Low Resistance Titanium Salicide Technology with Recoil Nitrogen Achieved by Silicidation after Ion Implantation through Contamination-Restrained Oxygen Free LPCVD-Nitride Layer (SICRON)
- High Density Recording Capability of Laser-Assisted Magnetic Recording
- Novel Window-Structure AlGaInP Visible-Light Laser Diodes with Non-Absorbing Facets Fabricated by Utilizing GaInP Natural Superlattice Disordering
- Band-Gap Energy Anomaly and Sublattice Ordering in GaInP and AlGaInP Grown by Metalorganic Vapor Phase Epitaxy : Semiconductors and Semiconductor Devices
- Low Resistance and Thermally Stable Ti-Silicided Shallow Junction Formed by Advanced 2-Step Rapid Thermal Processing and Its Application to Deep Submicron Contact
- 632.7 nm CW Operation (20℃) of AlGaInP Visible Laser Diodes Fabricated on (001) 6°off toward [110] GaAs Substrate
- Elevated Polycide Source/Drain Shallow Junctions with Advanced Silicidation Processing and Al Plug/Collimated PVD (Physical Vapor Deposition)- Ti/TiN/Ti/Polycide Contact for Deep-Submicron Complementary Metal-Oxide Semiconductors
- Monolithic Eight-Channel High-Power Low-Astigmatism AlGaAs Laser Diode Array
- Miniband Base Transistor
- Sharp Resonance Characteristics in Triple-Barrier Diodes with a Thin Undoped Spacer Layer
- Phase-Locked Epitaxy Using RHEED Intensity Oscillation
- Transport Properties of Bi_2Sr_2Ca_1Cu_2O_x/Ag Multifilamentary Tape
- Transport Properties of Bi-2212/Ag Superconducting Magnet with I_c over 500 A
- Blue Laser Diodes Fabricated on m-Plane GaN Substrates