スポンサーリンク
Advanced Technology Research Laboratories, Sumitomo Metal Industries, Ltd. | 論文
- Low-Temperature Metalorganic Chemical Vapor Deposition of GaAs on Si by Alternate Gas Flow of the Source Materials
- Ohmic Contact in Electron Cyclotron Resonance Chemical Vapor Deposition-TiN/Si Structure
- Generalized Regulation Networks with a Particular Class of Bell-Shaped Basis Function
- Relationship between Grown-in Defects in Czochralski Silicon Crystals
- Metal Organic Chemical Vapor Deposition Growth of GaAs on Si Using GaAs Buffer Layer Grown by an Alternate Gas Flow of Source Materials
- The Effects of AsH_3 Preflow Conditions at Low Temperature on the Morphology of GaAs Buffer Layers for GaAs/Si Grown by Metalorganic Chemical Vapor Deposition
- AsH_3 Pre-Exposure Conditions for GaAs Epitaxial Growth on Si by Melalorganic Chemical Vapor Deposition
- Raman Studies of Orthorhombic YBa_Sr_xCu_3O_
- Verification of Tersoff's Potential for Static Structural Analysis of Solids of Group-IV Elements
- Liquid Metal Flow with Heat Transfer in a Cold Crucible Confined by a Free Surface and a Solidification Front.
- Mathematical modelling for electromagnetic field and shaping of melts in cold crucible.
- Determination of C, P and S in steels by time-resolved atomic emission spectrometry.