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Advanced Technology Laboratory. Lg Semicon Co. | 論文
- Experimental Determination of Ultrathin Oxide Thickness Using Conventional Capacitance-Voltage Analysis
- Improved Extrapolation Method of Ultrathin Oxide Thickness Using C-V Characteristics of Metal-Oxide-Senliconductor Device : Semiconductors
- Electrical Characteristics of ZrO_2 Gate Dielectric Deposited on Ultrathin Silicon Capping Layer for SiGe Metal-Oxide-Semiconductor Device Applications
- Electrical and Reliability Characteristics of an Ultrathin TaO_xN_y Gate Dielectric Prepared by O_3 Annealing
- High Quality Ultrathin TaO_xN_y Gate Dielectric Prepared by Nitridation of Ta_2O_5
- Electrical Characteristics of Ultra Short Channel CMOS Device for Giga-bit DRAM Applications
- Effect of Channeling of Halo Ion Implantation on Threshold Voltage Instability of MOSFET's
- High Pressure H_2/D_2 Annealed SONOS Nonvolatile Memory Devices
- Improved Charge-Trapping Nonvolatile Memory with Dy-doped HfO2 as Charge-Trapping Layer and Al2O3 as Blocking Layer