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Advanced Research Center, Hitachi Cable, Ltd. | 論文
- Improvement of Reproducibility of High Transport J_c for Bi_2Sr_2CaCu_2O_y/Ag Tapes by Controlling Bi Content
- Fabrication of a Bi-2212/Ag Pancake Coil Generating 6000 G at 4.2 K in 12 T
- Properties of Metal-Semiconductor Field-Effect Transistors Fabricated on Carbon-Doped Semi-Insulating GaAs Crystal Grown by Liquid Encapsulated Czochralski Method
- Electrical Insulation Properties of Carbon-Corntrolled Semi-Insulating GaAs
- Influence of Boron in Semi-insulating GaAs Crystals on Their Electrical Activation by Si-Ion Implantation
- Degradation of Activation on Si-Implanted GaAs Crystal Wafers by Mechanical Surface Damages
- Enhanced Electron Mobility in the Inverted High Electron Mobility Transistor Structure by Two-Step Molecular Beam Epitaxy (MBE) Growth
- Single and Double δ-Doped Al_Ga_As/In_Ga_As Pseudomorphic Heterostructures Grown by Molecular-Beam Epitaxy
- Magnetic Field Dependence of Critical Current Density of Polycrystalline Tl-2223 Wire
- The Melt Process of Tl-Ba(Sr)-Ca-Cu-O Tape-Shaped Wire
- Flux Pinning Characteristics in Tl Series Superconductors
- Ag-Sheathed Tl-Ba-Ca-Cu-O Superconductor Tape with T_c≈120 K : Electrical Properties of Condensed Matter
- Improvement of Piezoelectric Properties of (K,Na)NbO3 Films Deposited by Sputtering
- Measurement of Abrupt Change of Carrier Concentration by C-V Method