Improvement of Piezoelectric Properties of (K,Na)NbO3 Films Deposited by Sputtering
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概要
- 論文の詳細を見る
(K,Na)NbO3 (KNN) films with high transverse piezoelectric coefficients were successfully deposited onto Pt/Ti/SiO2/Si substrates by RF magnetron sputtering. These films were polycrystalline and had pseudo-cubic perovskite structures with preferential $\langle 001 \rangle$ orientation. To improve their piezoelectric properties, we investigated the effects of annealing after the deposition and the $\text{Na}/(\text{K}+ \text{Na})$ ratio of the films. Annealing in air at 750 °C led to a decrease in the residual strain in the KNN crystal and the disappearance of openings at the grain boundary, thereby improving the transverse piezoelectric coefficient and leakage current properties. We also investigated the transverse piezoelectric coefficient and dielectric constant as a function of the $\text{Na}/(\text{K}+ \text{Na})$ ratio; both had maximum values at a ratio of approximately 0.55. For the KNN films, $e_{31}^{*}$ ranged between $-10.0$ and $-14.4$ C/m2; thus, it was superior to previously reported values for lead-free piezoelectric films and was comparable to the best commercially available Pb(Zr,Ti)O3 films.
- 2011-04-25
著者
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Shibata Kenji
Advanced Electronic Materials Research Department Research And Development Laboratory Hitachi Cable
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MISHIMA Tomoyoshi
Advanced Electronic Materials Research Department, Research and Development Laboratory, Hitachi Cabl
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NOMOTO Akira
Advanced Research Center, Hitachi Cable, Ltd.
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Nomoto Akira
Advanced Research Center Hitachi Cable Ltd.
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Suenaga Kazufumi
Advanced Electronic Materials Research Department, Research and Development Laboratory, Hitachi Cabl
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Watanabe Kazutoshi
Advanced Electronic Materials Research Department, Research and Development Laboratory, Hitachi Cabl
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Horikiri Fumimasa
Advanced Electronic Materials Research Department, Research and Development Laboratory, Hitachi Cabl
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Mishima Tomoyoshi
Advanced Electronic Materials Research Department Research And Development Laboratory Hitachi Cable
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Shibata Kenji
Advanced Electronic Materials Research Department, Research and Development Laboratory, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan
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Nomoto Akira
Advanced Electronic Materials Research Department, Research and Development Laboratory, Hitachi Cable, Ltd., 3550 Kidamari, Tsuchiura, Ibaraki 300-0026, Japan
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Suenaga Kazufumi
Advanced Electronic Materials Research Department, Research and Development Laboratory, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan
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Nomoto Akira
Advanced Electronic Materials Research Department, Research and Development Laboratory, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan
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Watanabe Kazutoshi
Advanced Electronic Materials Research Department, Research and Development Laboratory, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan
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Horikiri Fumimasa
Advanced Electronic Materials Research Department, Research and Development Laboratory, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan
関連論文
- Piezoelectric Properties of (K,Na)NbO_3 Films Deposited by RF Magnetron Sputtering
- Flux Pinning Characteristics in Tl Series Superconductors
- Improvement of Piezoelectric Properties of (K,Na)NbO3 Films Deposited by Sputtering
- Evaluation of Crystal Orientation for (K,Na)NbO Films Using X-ray Diffraction Reciprocal Space Map and Relationship between Crystal Orientation and Piezoelectric Coefficient
- Effect of Lattice Strain and Improvement of the Piezoelectric Properties of (K,Na)NbO3 Lead-Free Film
- Curie Temperature, Biaxial Elastic Modulus, and Thermal Expansion Coefficient of (K,Na)NbO3 Piezoelectric Thin Films
- Crystalline Structure of Highly Piezoelectric (K,Na)NbO3 Films Deposited by RF Magnetron Sputtering