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Advanced LSI Technology Laboratory, Research and Development center, Toshiba corporation | 論文
- Experimental Analysis of Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory
- Power Consumption of Hybrid Circuits of Single-Electron Transistors and Complementary Metal-Oxide-Semiconductor Field-Effect Transistors
- Silicon Planar Esaki Diode Operating at Room Temperature
- SET/CMOS Hybrid for Future Low-Power LSI : Experimental Demonstration, Power Estimation, and Strategy for Its Reduction
- Challenge to new silicon devices
- Study on Carrier Transport Limited by Coulomb Scattering due to Charged Centers in HfSiON MISFETs
- Electron Mobility Degradation Mechanisms in HfSiON MISFETs under the Real Operating Condition
- Quantitative Understanding of Electron Mobility Limited by Coulomb Scattering in Metal Oxide Semiconductor Field Effect Transistors with N2O and NO Oxynitrides
- Quantitative Understanding of Electron Mobility Limited by Coulomb Scattering in MOSFETs with N_2O and NO Oxynitrides