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Advanced Epitaxy Technol. Inc. Hsinchu Twn | 論文
- Investigation of the Indium Atom Interdiffusion on the Growth of GaN/InGaN Heterostructures
- Thermal Stability of Co-Sputtered Ru-Ti Alloy Electrodes for Dynamic Random Access Memory Applications
- Rapid-Thermal-Processed BaTiO_3 Thin Films Deposited by Liquid-Source Misted Chemical Deposition
- Effects of Rapid Thermal Annealing on Si Delta-Doped GaInP Grown by Low Pressure Metalorganic Chemical Vapor Deposition
- Silicon Delta Doping of GaInP Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
- Optical and Electrical Characteristics of CO_2-Laser-Treated Mg-Doped GaN Film
- Electrical Properties of Multiple High-Dose Si Implantation in p-GaN
- Epitaxial Growth of the GaN Film by Remote-Plasma Metalorganic Chemical Vapor Deposition
- Back-Gating Effects on the Ga_In_P/InP/InGaAs High-Electron-Mobility Transistor
- Influence of Metalorganic Sources on the Composition Uniformity of Selectively Grown Ga_XIn_P
- Cation Source Dependence of Ga_In_P Growth Rate by Low-Pressure Metalorganic Chemical Vapor Deposition