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Advanced Discrete Semiconductor Technology Laboratory, Toshiba Corporation | 論文
- Evaluation of 0.3μm Poly-Silicon CMOS Circuits for Intelligent Power IC Application
- 25V - 13mΩ・mm^2 Low On-Resistance Novel Structure Trench Gate LDMOS
- Electrical Characteristics of Polysilicon CMOS Analog and Driver Circuits for Intelligent IGBTs
- Evaluation of 0.3μm Poly-Silicon CMOS Circuits for Intelligent Power IC Application
- Effects of Strain on Highly-Mismatched AlGaN/GaN Multiple Quantum Wells
- Electron Scattering Rates in AlGaN/GaN Quantum Wells for 1.55-μm Inter-Subband Transition
- Feasibility Study on Ultrafast Nonlinear Optical Properties of 1.55-μm Intersubband Transition in AlGaN/GaN Quantum Wells
- Effect of Polarization Field on Intersubband Transition in AlGaN/GaN Quantum Wells