スポンサーリンク
Advanced Device Development Division, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan | 論文
- Suppression of Electromigration Early Failure of Cu/Porous Low-$k$ Interconnects Using Dummy Metal
- Comparison of Lifetime Improvements in Electromigration between Ti Barrier Metal and Chemical Vapor Deposition Co Capping
- Degradation of Electromigration Lifetime of Cu/Low-$k$ Interconnects by Postannealing
- Electromigration Lifetime Enhancement of CoWP Capped Cu Interconnects by Thermal Treatment
- Statistical Analysis of Lifetime Distribution of Time-Dependent Dielectric Breakdown in Cu/Low-$k$ Interconnects by Incorporation of Overlay Error Model
- A Novel Gate Electrode Structure for Reduction of Gate Resistance of Sub-0.1 μm RF/Mixed-Signal Metal Oxide Semiconductor Field-Effect Transistors