Ma Bei | Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan
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- Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japanの論文著者
Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan | 論文
- Suppression of Crack Generation Using High-Compressive-Strain AlN/Sapphire Template for Hydride Vapor Phase Epitaxy of Thick AlN Film
- Reaction Route of GaN Powder Formation via Sintering Gallium Ethylenediamine Tetraacetic Acid Complexes in Ammonia
- Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN
- Transmission Electron Microscopy Characterization of Position-Controlled InN Nanocolumns
- Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy