Maruyama Takeo | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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- Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japanの論文著者
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan | 論文
- Low-Threshold-Current Operation of High-Mesa Stripe Distributed Reflector Laser Emitting at 1540 nm
- Very High Electric Isolation Resistance between Distributed Reflector Laser and Front Power Monitor through Deeply Etched Narrow Groove
- Bonding and Photoluminescence Characteristics of GaInAsP/InP Membrane Structure on Silicon-on-Insulator Waveguides by Surface Activated Bonding
- GaInAsP/InP Membrane Buried Heterostructure Distributed Feedback Laser with Air-Bridge Structure
- Continuous Wave Operation of Thin Film Lateral Current Injection Lasers Grown on Semi-Insulating InP Substrate