NOZAWA Hiroshi | Semiconductor Device Engineering Laboratory, Toshiba Corporation
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概要
Semiconductor Device Engineering Laboratory, Toshiba Corporation | 論文
- A Novel Sensing Scheme with On-Chip Page Copy for Flexible Voltage NAND Flash Memories (Special Issue on ULSI Memory Technology)
- A Novel Threshold Voltage Distribution Measuring Technique for Flash EEPROM Devices (Special Issue on Microelectronic Test Structure)
- Statistical Memory Yield Analysis and Redundancy Design Considering Fabrication Line Improvement (Special Issue on LSI Memories)
- Time Dependent Resistance Increase in Poly-Si Load Resistor due to Hydrogen Diffusion from Plasma-Enhanced Chemical Vapor Deposition Silicon Nitride Film in High Density Static Random Access Memories
- The Damage Energy Transfer to Interfacial Oxide by Phosphorus Ion Implantation for Small Geometry Polysilicon to Polysilicon Contact