Ohshima Norikazu | System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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- 同名の論文著者
- System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japanの論文著者
System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan | 論文
- 1.2 nm HfSiON/SiON Stacked Gate Insulators for 65-nm-Node MISFETs
- Switching-Field Stabilization against Effects of High-Temperature Annealing in Magnetic Tunnel Junctions using Thermally Reliable NixFe100-x/Al-Oxide/Ta Free Layer
- Fully Silicided NiSi Gate Electrodes on HfSiON Gate Dielectrics for Low-Power Applications
- Mechanical Property Control of Low-$k$ Dielectrics for Diminishing Chemical Mechanical Polishing (CMP)-Related Defects in Cu-Damascene Interconnects
- Development of Hard Mask Process on Magnetic Tunnel Junction for a 4-Mbit Magnetic Random Access Memory