Gao Bin | Institute of Microelectronics, Peking University, Beijing 100871, P. R. China

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• 同名の論文著者
• Institute of Microelectronics, Peking University, Beijing 100871, P. R. Chinaの論文著者

Institute of Microelectronics, Peking University, Beijing 100871, P. R. China | 論文

• Gd Doping Improved Resistive Switching Characteristics of TiO2-Based Resistive Memory Devices
• Forward-Body-Bias-Enhanced Negative Bias Temperature Instability Recovery of p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
• Monte Carlo Simulation of Band-to-Band Tunneling in Silicon Devices
• Evaluations of Scaling Properties for Ge on Insulator MOSFETs in Nano-Scale
• The Effect of Current Compliance on the Resistive Switching Behaviors in TiN/ZrO2/Pt Memory Device

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