Kondo Shinichiro | Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
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- Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japanの論文著者
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan | 論文
- Strain Relaxation Mechanisms in AlGaN Epitaxy on AlN Templates
- Freestanding Highly Crystalline Single Crystal AlN Substrates Grown by a Novel Closed Sublimation Method
- Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions
- Extremely Low-Resistivity and High-Carrier-Concentration Si-Doped Al
- GaInN-Based Tunnel Junctions in n--p--n Light Emitting Diodes