Koike Hiroshi | Silicon Systems Research Laboratories, NEC Corporation
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概要
Silicon Systems Research Laboratories, NEC Corporation | 論文
- 70nm MOSFET Device Simulation Considering Two Dimensional Channel Quantization and Self-Consistent Non-Equilibrium Carrier Transport
- Effects of Selecting Channel Direction in Improving Performance of Sub-100nm MOSFETs Fabricated on (110) Surface Si Substrate
- Three Dimensional MOSFET Simulation for Analyzing Statistical Dopant-Induced Fluctuations Associated with Atomistic Process Simulator(the IEEE International Coference on SISPAD '02)
- Mechanism of Leakage Current Reduction by Adding WO_3 to Crystallized Ta_2O_5 : Structure and Mechanical and Thermal Properties of Condensed Matter
- Suppression of Charges in Al_2O_3 Gate Dielectric and Improvement of MOSFET Performance by Plasma Nitridation(High-κ Gate Dielectrics)