ARIKADO T. | Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.
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- Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.の論文著者
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp. | 論文
- Surface Channel Metal Gate Complementary MOS with Light Counter Doping and Single Work Function Gate Electrode
- Surface Channel Metal Gate Complementary MOS with Light Counter Doping and Single Work Function Gate Electrode
- Impact of Flash Lamp Annealing on 20-nm-Gate-Length Metal Oxide Silicon Field Effect Transistors
- Low Leakage TiO_2 Gate Insulator Formed by Ultrathin TiN Deposition and Low-Temperature Oxidation
- Novel Elevated Source/Drain Technology for FinFET Overcoming Agglomeration and Facet Problems Utilizing Solid Phase Epitaxy