YAMANAKA Michinari | ULSI Process Technology Development Center, Matsushita Electronics Corporation
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概要
ULSI Process Technology Development Center, Matsushita Electronics Corporation | 論文
- Voltage Shift Effect on Retention Failure in Ferroelectric Memories
- Retention Characteristics of a Ferroelectric Memory Based on SrBi_2(Ta, Nb)_2O_9
- Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WN_x Gate Formation
- Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WNx Gate Formation
- Characterization of the Depth Profile of Electrically Activated Ion-Implanted Impurities by X-ray Photoelectron Spectroscopy and Anodic Oxidation