OHSHIMA Shigetoshi | Department of Electronic Engineering, Faculty of Engineering, Tohoku University
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- Department of Electronic Engineering, Faculty of Engineering, Tohoku Universityの論文著者
Department of Electronic Engineering, Faculty of Engineering, Tohoku University | 論文
- A Comparative Examination of Ion Implanted n^+p Junctions Annealed at 1000℃ and 450℃
- Effect of Substrate Boron Concentration on the Integrity of 450℃-Annealed Ion-Implanted Junctions
- Ultra-Thin Silicon Oxynitride Film Grown at Low-Temperature by Microwave-Excited High-Density Kr/O_2/N_2 Plasma
- Formation of Ultra-Shallow and Low-Leakage p^+n Junctions by Low-Temperature Post-Implantation Annealing
- Reducing Reverse-Bias Current in 450℃-Annealed n^+p Junction by Hydrogern Radical Sintering