OHSAKI Hisashi | Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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- Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technologyの論文著者
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology | 論文
- A Novel Process for Fabrication of Gated Silicon Field Emitter Array Taking Advantage of Ion Bombardment Retarded Etching
- Enhancing Noise Margins of Fin-Type Field Effect Transistor Static Random Access Memory Cell by Using Threshold Voltage-Controllable Flexible-Pass-Gates
- FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current Reduction
- Fabrication of ultrathin Si Channel Wall For Vertical Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (DG MOSFET) by Using Ion-Bombardment-Retarded Etching (IBRE)
- Demonstration of Dopant Profiling in Ultrathin Channels of Vertical-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect-Transistor by Scanning Nonlinear Dielectric Microscopy