Konno Tomohiro | Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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- Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japanの論文著者
Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan | 論文
- Interfacial Dipole at High-$k$ Dielectric/SiO2 Interface: X-ray Photoelectron Spectroscopy Characteristics
- Experimental and Analytical Characterization of Dual-Gated Germanium Junctionless p-Channel Metal--Oxide--Semiconductor Field-Effect Transistors
- Counter Dipole Layer Formation in Multilayer High-k Gate Stacks
- Higher-k Scalability and Leakage Current Reduction of SiO2-Doped HfO2 in Direct Tunneling Regime
- Kinetic Effects of O-Vacancy Generated by GeO2/Ge Interfacial Reaction