NAGAHARA Seiji | ULSI Device Development Division, NEC Corporation
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概要
ULSI Device Development Division, NEC Corporation | 論文
- Contrast Evaluation of the SCALPEL GHOST in 100 kV Electron Projection Lithography
- Luminescence Centers in Indium-Implanted Silicon
- Ultra Shallow Junction Formation with High Process Controllability Using Optimized Rapid Thermal Anneal Process
- Lateral Diffusion Distance Measurement of 40-80 nm Junctions by Etching/TEM-Electron Energy Loss Spectroscopy Method
- Dual Damascene Interconnect Technology for 130-nm-node Complementary Metal-Oxide-Semiconductor Devices Using Ladder-Oxide Film