ASANO Hidefumi | NTT Electrical Communications laboratories, Nippon Telegraph and Telephone Corporation
スポンサーリンク
概要
NTT Electrical Communications laboratories, Nippon Telegraph and Telephone Corporation | 論文
- Effects of Substrate-Surface Cleaning on Solid Phase Epitaxial Si Films
- Oxygen-Doped Si Epitaxial Film (OXSEF)
- Determination of Hydrogen Concentration in PCVD Silicon Nitride Films by Elastic Recoil Detection Analysis
- Nonradiative e-h Recombination Characteristics of Mid-Gap Electron Trap in Al_xGa_As (X=0.4) Grown by Molecular Beam Epitaxy
- The Low Temperature Reaction of Radiation Defects in GaAs Introduced by γ-Ray at 33 K