Determination of Hydrogen Concentration in PCVD Silicon Nitride Films by Elastic Recoil Detection Analysis

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1987-09-20

著者

• SAKAKIBARA Yutaka

  NTT Electrical Communications Laboratories, Nippon Telegraph and Telephone Corporation

• Maeda Masahiko

  Ntt Electrical Communications Laboratories

• TAKAHASHI Mitsutoshi

  NTT Electrical Communication Laboratories

• Takahashi Mitsutoshi

  Ntt Electrical Communications Laboratories

• Sakakibara Yutaka

  Ntt Electrical Communications Laboratories

• Sakakibara Yutaka

  Ntt Electrical Communication Laboratories

関連論文

• Effects of Substrate-Surface Cleaning on Solid Phase Epitaxial Si Films
• Oxygen-Doped Si Epitaxial Film (OXSEF)
• Bonds and Defects in Plasma-Deposited Silicon Nitride Using SiH_4-NH_3-Ar Mixture
• Low Dielectric Constant Amorphous SiBN Ternary Films Prepared by Plasma-Enhanced Deposition
• Determination of Hydrogen Concentration in PCVD Silicon Nitride Films by Elastic Recoil Detection Analysis

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