INOUE Naoya | System Devices and Fundamental Research, NEC Corporation

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System Devices and Fundamental Research, NEC Corporation | 論文

• Alloy Semiconductor System with Tailorable Band-Tail: A Band-State Model and Its Verification Using Laser Characteristics of InGaN Material System : Optics and Quantum Electronics
• Fabrication of Self-Aligned Surface Tunnel Transistors with a 80-nm Gate Length
• Wavelength-Dispersive Total Reflection X-Ray Fluorescence with High-Brilliance Undulator Radiation at SPring-8
• Intra-Leve Mix-and-Match Lithography Process for Fabricating Sub-100-nm Complementary Metal-Oxide-Semiconductor Devices using the JBX-9300FS Point-Electron-Beam System
• Formation of Nickel Self-Aligned Silicide by Using Cyclic Deposition Method

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