Hayashi Takeshi | Process Development Dept. Process Technology Development Div. Production And Technology Unit Renesas
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Process Development Dept. Process Technology Development Div. Production And Technology Unit Renesas | 論文
- Low temperature divided CVD technique for TiN metal gate electrodes of p-MISFETs
- Effect of N2 Gas Flow Ratio in Plasma-Enhanced Chemical Vapor Deposition with SiH4–NH3–N2–He Gas Mixture on Stress Relaxation of Silicon Nitride
- A New Divided Deposition Method of TiN Thin Films for MIM Capacitor Applications
- Investigation of the Divided Deposition Method of TiN Thin Films for Metal–Insulator–Metal Capacitor Applications
- Effects of Dielectric-Layer Composition on Growth of Self-Formed Ti-Rich Barrier Layers in Cu(1at% Ti)/Low-k Samples