Kubo Maki | Hitachi Ltd. Micro Device Division
スポンサーリンク
概要
関連著者
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武田 健一
日立製作所 中央研究所
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Takeda Ken-ichi
Central Research Laboratory Hitachi Ltd.
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NOGUCHI Junji
Hitachi, Ltd., Micro Device Division
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TAKEDA Ken-ichi
Hitachi, Ltd., Central Research Laboratory
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Kubo Maki
Hitachi Ltd. Micro Device Division
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Takeda Ken'ichi
Central Research Laboratory Hitachi Ltd.
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Takeda Ken-ichi
Central Research Laboratory, Hitachi Ltd., Kokubunji-shi, Tokyo 185-8601, Japan
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Takeda Ken-ichi
Hitachi, Ltd., Central Research Laboratory, 1-280 Higashikoigakubo Kokubunji-shi, Tokyo 185-8601, Japan
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Takeda Ken-ichi
Hitachi, Ltd., Central Research Laboratory, Kokubunji, Tokyo 185-8601, Japan
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Takeda Ken-ichi
Central Research Laboratory, Hitachi Ltd., Higashikoigakubo, Kokubunji, Tokyo 185-8601, Japan
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SAITO Tatsuyuki
Hitachi, Ltd., Micro Device Division
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Maruyama Hiroyuki
Hitachi Ltd. Micro Device Division
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TSUNEDA Ruriko
Hitachi, Ltd., Central Research Laboratory
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MAKABE Kazuya
Renesas Technology Corp.
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Ohashi Naofumi
Semiconductor Leading Edge Technologies Inc.
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Maruyama Hiroyuki
Hitachi, Ltd., Micro Device Division, 6-16-3 Shinmachi Ome-shi, Tokyo 198-8512, Japan
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Miura Noriko
Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Miura Noriko
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
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Saito Tatsuyuki
Hitachi, Ltd., Micro Device Division, 6-16-3 Shinmachi Ome-shi, Tokyo 198-8512, Japan
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Noguchi Junji
Hitachi, Ltd., Micro Device Division, 6-16-3 Shinmachi Ome-shi, Tokyo 198-8512, Japan
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Ohashi Naofumi
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba-shi, Ibaraki 305-8569, Japan
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Tsuneda Ruriko
Hitachi, Ltd., Central Research Laboratory, Kokubunji, Tokyo 185-8601, Japan
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Makabe Kazuya
Renesas Technology Corp., 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan
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Kubo Maki
Hitachi, Ltd., Micro Device Division, 6-16-3 Shinmachi Ome-shi, Tokyo 198-8512, Japan
著作論文
- Dependence of Time-Dependent Dielectric Breakdown Lifetime on the Structure in Cu Metallization
- Influence of Cu-Ion Migration and Fine-Line Effect on Time-Dependent Dielectric Breakdown Lifetime of Cu Interconnects