Ono Atsuki | Ulsi Device Development Division Nec Corporation
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概要
Ulsi Device Development Division Nec Corporation | 論文
- Contrast Evaluation of the SCALPEL GHOST in 100 kV Electron Projection Lithography
- Luminescence Centers in Indium-Implanted Silicon
- Circuit-Simulation Model of C_ Changes in Small-Size MOSFETs Due to High Channel-Field Gradients(the IEEE International Conference on SISPAD '02)
- A Compact Model of the Pinch-off Region of 100nm MOSFETs Based on the Surface-Potential(Semiconductor Materials and Devices)
- 1/f-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation(Semiconductor Materials and Devices)