Liang M‐s | Advanced Module Technology Division Taiwan Semiconductor Manufacturing Company
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概要
Advanced Module Technology Division Taiwan Semiconductor Manufacturing Company | 論文
- InGaN/GaN Light-Emitting Diodes with Rapidly Thermal-Annealed Ni/ITO p-Contacts
- Threshold Voltage Instability in nMOSFETs with HfSiO/SiO_2 High-k Gate Stacks
- Annealing Effect on Boron High-Energy-Ion-Implantation-Induced Defects in Si
- AlGaN/GaN Modulation-Doped Field-Effect Transistors with An Mg-doped Carrier Confinement Layer
- Effects of Base Oxide Thickness and Silicon Composition on Charge Trapping in HfSiO/SiO2 High-$k$ Gate Stacks