Omura Yasuhisa | Graduate School Of Eng Kansai University

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概要

• OMURA Yasuhisaの詳細を見る
• 同名の論文著者
• Graduate School Of Eng Kansai Universityの論文著者

関連著者

• Omura Yasuhisa

  Graduate School Of Eng Kansai University

• Sato Shingo

  Graduate School Of Engineering Hokkaido University

• OMURA Yasuhisa

  Graduate School of Eng, Kansai University

• Omura Yasuhisa

  Graduate School Of Sci. & Eng Kansai University

• Yamamura Tsuyoshi

  Graduate School Of Sci. & Eng Kansai University

• Sato Shingo

  Graduate School Of Sci. & Eng Kansai University

• Omura Yasuhisa

  Graduate School of Engineering, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan

• Omura Yasuhisa

  Graduate School Of Science And Eng. Kansai University

• MASUDA Hiroshi

  Graduate School of Science and Eng., Kansai University

• MIMURA Yoshio

  Graduate School of Science and Eng., Kansai University

• Mimura Yoshio

  Graduate School Of Science And Eng. Kansai University

• MURASHIMA Kensuke

  Graduate School of Eng, Kansai University

• Murashima Kensuke

  Graduate School Of Eng Kansai University

• Masuda Hiroshi

  Graduate School Of Science And Eng. Kansai University

• Sato Shingo

  Graduate School of Science and Engineering, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan

• Sato Shingo

  Graduate School of Engineering, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan

• Omura Yasuhisa

  Graduate School of Science and Engineering, Kansai University, 3-3-35 Yamatecho, Suita, Osaka 564-8680, Japan

• Tahara Yuki

  Graduate School of Engineering, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan

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著作論文

• Impacts of Geometrical Aspect Ratio on Drivability and Short-Channel-Effects of Multi-Gate SOI MOSFET's
• Design Feasibility of High-Performance Si Wire Gate-All-Around Metal--Oxide--Semiconductor Field-Effect Transistor in Sub-30-nm-Channel Regime
• Experimental Investigation of Obstacle-Avoiding Mobile Robots without Image Processing(ELECTRICAL AND ELECTRONIC ENGINEERING,50th anniversary edition)
• Behavior of Low-Temperature Phonon-Limited Electron Mobility of Double-Gate Field-Effect Transistor with (111) Si Surface Channel
• Empirical Model of Phonon-Limited Electron Mobility for Ultra-Thin Body SOI MOSFET
• Performance Investigation of Field-Emission Device Surrounded by High-k Dielectric (FESH)
• Impact of Band Alignment on Line Electron Density and Channel Capacitance of Rectangular n-Channel Gate-All-Around Wire Field-Effect Transistor
• Physics-Based Determination of Carrier Effective Mass Assumed in Density Gradient Model
• Empirical Quantitative Modeling of Threshold Voltage of Sub-50-nm Double-Gate Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor

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