Impacts of Geometrical Aspect Ratio on Drivability and Short-Channel-Effects of Multi-Gate SOI MOSFET's

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概要

• 論文の詳細を見る

• This paper proposes a design guideline for the aspect ratio (R_<h/w>) of the fin height (h) to fin width (w) of 3-D devices (FinFET like double-gate (DG) FET and triple-gate (TG)-FET) that is based on device simulations. Since any change in the aspect ratio yields the trade-off between drivability and short-channel effects, it is shown that optimization of the aspect ratio is essential in designing 3-D architectural devices. We found that the increase in w seems to bring a high drive current (I_<on>) and an enhancement of I_<on>, but that a large w is undesirable for shorter channel length (L) devices because the drain-induced barrier lowering (DIBL) effect is enhanced ; TG-FET is superior to FinFET in terms of both drivability and short-channel effects. In addition, we found that the guideline of w<L/3 is essential for suppression of the short-channel effects of TG-FET's. We conclude, therefore, that a narrow, high fin is best for high performance TG-FET's that offer suppressed short-channel effects.

• 関西大学の論文

著者

• OMURA Yasuhisa

  Graduate School of Eng, Kansai University

• Omura Yasuhisa

  Graduate School Of Eng Kansai University

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