Performance Investigation of Field-Emission Device Surrounded by High-k Dielectric (FESH)

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概要

• 論文の詳細を見る
• 2005-09-13

著者

• OMURA Yasuhisa

  Graduate School of Eng, Kansai University

• Omura Yasuhisa

  Graduate School Of Eng Kansai University

• MURASHIMA Kensuke

  Graduate School of Eng, Kansai University

• Murashima Kensuke

  Graduate School Of Eng Kansai University

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• Behavior of Low-Temperature Phonon-Limited Electron Mobility of Double-Gate Field-Effect Transistor with (111) Si Surface Channel
• Empirical Model of Phonon-Limited Electron Mobility for Ultra-Thin Body SOI MOSFET
• Performance Investigation of Field-Emission Device Surrounded by High-k Dielectric (FESH)
• Impact of Band Alignment on Line Electron Density and Channel Capacitance of Rectangular n-Channel Gate-All-Around Wire Field-Effect Transistor
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