YAGISHITA Atsushi | Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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- Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporationの論文著者
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation | 論文
- Defects Induced by Carbon Contamination in Low-Temperature Epitaxial Silicon Films Grown with Monosilane
- Fabrication of Silicon-on-Nothing Structure by Substrate Engineering Using the Empty-Space-in-Silicon Formation Technique
- Micro-structure Transformation of Silicon : A Newly Developed Transformation Technology for Patternin Silicon Surfaces using the Surface Migration of Silico Atoms by Hydrogen Annealing
- Novel Elevated Source/Drain Technology for FinFET Overcoming Agglomeration and Facet Problems Utilizing Solid Phase Epitaxy
- Retarding Mechanism of Si Selective Epitaxial Growth on CMOS Structure due to Doped Arsenic in the Si Substrate