Ishida Hiroyuki | Department of Electronic Engineering, Faculty of Engineering, Tohoku University

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• 同名の論文著者
• Department of Electronic Engineering, Faculty of Engineering, Tohoku Universityの論文著者

Department of Electronic Engineering, Faculty of Engineering, Tohoku University | 論文

• A Comparative Examination of Ion Implanted n^+p Junctions Annealed at 1000℃ and 450℃
• Effect of Substrate Boron Concentration on the Integrity of 450℃-Annealed Ion-Implanted Junctions
• Ultra-Thin Silicon Oxynitride Film Grown at Low-Temperature by Microwave-Excited High-Density Kr/O_2/N_2 Plasma
• Formation of Ultra-Shallow and Low-Leakage p^+n Junctions by Low-Temperature Post-Implantation Annealing
• Reducing Reverse-Bias Current in 450℃-Annealed n^+p Junction by Hydrogern Radical Sintering

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