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Institute of Physics | 論文
- Low-power scan driver embedded with level shifter using depletion-mode amorphous indium–gallium–zinc–oxide thin-film transistors for high-resolution flat-panel displays
- Angular tunable zero-field ferromagnetic resonance frequency in oblique sputtered CoFeBSm thin films
- Morphology control of ordered Si nanowire arrays by nanosphere lithography and metal-assisted chemical etching
- Precipitates formed in silicon wafers by prolonged high-temperature annealing in nitrogen atmosphere
- Characterization of silicon nitride thin films deposited by reactive sputtering and plasma-enhanced CVD at low temperatures
- Effects of interface reaction on the performance of AlO
- Improvement of myocardial displacement estimation using subkernels for cross correlation between ultrasonic RF echoes
- Correction of change in propagation time delay of pulse wave during flow-mediated dilation in ultrasonic measurement of arterial wall viscoelasticity
- Measurement of shear viscoelasticity using dual acoustic radiation pressure induced by continuous-wave ultrasounds
- Echo speckle imaging of blood particles with high-frame-rate echocardiography
- Synthesis of refractory conductive niobium carbide nanowires within the inner space of carbon nanotube templates
- Efficient generation of fusion neutrons from cryogenically cooled heteronuclear clusters irradiated by intense femtosecond lasers
- Organic ferroelectric gate field-effect transistor memory using high-mobility rubrene thin film
- High-energy noiselike rectangular pulse in a passively mode-locked figure-eight fiber laser
- Groove-structured metasurfaces for modulation of surface plasmon propagation
- GaN high electron mobility transistors for sub-millimeter wave applications
- Bilayer contacts composed of amorphous and solid-phase crystallized transparent conducting oxides for solar cells
- Anisotropic lateral growth of homoepitaxial diamond (111) films by plasma-enhanced chemical vapor deposition
- Analysis of selective growth of n-type diamond in lateral p–n junction diodes by cross-sectional transmission electron microscopy
- Carrier transport in homoepitaxial diamond films with heavy phosphorus doping