Organic ferroelectric gate field-effect transistor memory using high-mobility rubrene thin film

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概要

• 論文の詳細を見る
• Institute of Physicsの論文
• 2014-03-14

著者

• Kanashima Takeshi

  Division of Advanced Electrics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan

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• Fabrication and Characterization of Ferroelectric Gate Field-Effect Transistor Memory Based on Ferroelectric–Insulator Interface Conduction
• Organic ferroelectric gate field-effect transistor memory using high-mobility rubrene thin film

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