GaN high electron mobility transistors for sub-millimeter wave applications

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概要

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• This paper reviews different technologies recently developed to push the performance of GaN-based high electron mobility transistors (HEMTs) into sub-mm wave frequencies. To understand the impact and need of each technology, a device delay model based on small-signal equivalent circuit parameters is introduced, which divides the total device delay into intrinsic, extrinsic, and parasitic components. Then, several technologies to improve the speed of GaN HEMTs are discussed according to their contribution on each delay component. Finally, the key limiting factors for the high speed operation of these transistors under high drain or gate bias range are studied and novel approaches to solve these problems are presented.

• Institute of Physicsの論文
• 2014-09-03

著者

• Lee Dong

  Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.

関連論文

• GaN high electron mobility transistors for sub-millimeter wave applications

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