A Comparison of Low-Energy As Ion Implantation and Impurity-Free Disordering Induced Defects in N-Type GaAs Epitaxial Layers
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-03-15
著者
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Jagadish C.
Department of Electronic Materials Engineering, Research School of Physical Science and Engineering,
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Tan H.
Department Of Trauma And Orthopaedic Surgery St. James's University Hospital
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Jagadish C.
Department Of Electronic Material Engineering Research Shcool Of Physical And Engineering The Austra
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Jagadish C.
Department Of Electronic Materials Engineering Research School Of Physical Sciences And Engineering
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Svensson B.
Physics Department/physical Electronics
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DEENAPANRAY Prakash
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering
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Tan H.
Department Of Electronic Materials Engineering Research School Of Physical Sciences And Engineering
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Deenapanray Prakash
Department Of Electronic Materials Engineering Research School Of Physical Sciences And Engineering
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