A Comparison of Low-Energy As Ion Implantation and Impurity-Free Disordering Induced Defects in N-Type GaAs Epitaxial Layers
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概要
- 論文の詳細を見る
We have compared the electrical properties of n-type GaAs layers disordered by either 40 keV As ion implantation or an impurity-free process employing an SiO2 capping layer. Current–voltage and capacitance–voltage measurements on Au Schottky barrier diodes fabricated on the processed layers showed that the impurity-free method retained the much better electrical quality of the GaAs epitaxial layers. Different sets of defects were observed in the implanted samples and impurity-free disordered samples, which meant that the charge transfer across the Schottky barriers was different in the two cases. Our results further reveal that the concentrations and diffusion lengths of defects created by ion implantation were much larger. The impurity-free method retains the better electrical quality of the semiconductor material.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-03-15
著者
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Jagadish C.
Department Of Electronic Material Engineering Research Shcool Of Physical And Engineering The Austra
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Svensson B.
Physics Department/physical Electronics
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Tan H.
Department Of Electronic Materials Engineering Research School Of Physical Sciences And Engineering
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Deenapanray Prakash
Department Of Electronic Materials Engineering Research School Of Physical Sciences And Engineering
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Tan H.
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, A.C.T. 0200, Australia
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Svensson B.
Physics Department/Physical Electronics, P.B. 1048 Blindern, N-0316 Oslo, Norway
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