Investigation of AlGaAs/GaAs V-grooved Quantum Wire Inrared Photodetector Structures

概要

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An Al_<0.5>Ga_<0.5>As/GaAs quantum wires infrared photo-detectors (QWRIP) based on V-grooved substrate is fabricated. The inter-band transition in the quantum wires is characterized by spatially resolved micro-photoluminescence (micro-PL) measurement. The theoretical calculation of electronic structures is accomplished based on the Green function. The inter-subband transition is measured by photocurrent at 80K, and the oigin of the infrared response at 9μm is from the inter-subband transition in quantum wire regin, which is confirmed by the theoretical calculation results.
社団法人応用物理学会の論文
2000-09-15

著者

Lu W
Faculty Of Pharmaceutical Sciences Toyama Medical And Pharmaceutical University
Lu Wei
中華人民共和国
Shen S.C.
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics of Chinese Academy
Jagadish C.
Department of Electronic Materials Engineering, Research School of Physical Science and Engineering,
Jagadish C
Australian National Univ. Act Aus
Jagadish C.
Department Of Electronic Material Engineering Research Shcool Of Physical And Engineering The Austra
Lu W
Tf‐wmatm Nj Usa
Shen S.c.
National Laboratory For Infrared Physics Shanghaiinstitute Of Technical Physics Chinese Academy Of S
Shen S.c.
Laboratory For Infrared Physics Academia Sinica
Shen S.c.
National Laboratory For Infrared Physics Shanghai Institute Of Technical Physics Of Chinese Academy
Willander M.
Laboratory Of Physical Electronics And Photonics Mc2 Department Of Physics Fysikgrand 3 University O
LIU X.Q.
National Laboratory for Infrared Physics, ShanghaiInstitute of Technical Physics, Chinese Academy of
LI N.
National Laboratory for Infrared Physics, ShanghaiInstitute of Technical Physics, Chinese Academy of
LI Z.F.
National Laboratory for Infrared Physics, ShanghaiInstitute of Technical Physics, Chinese Academy of
LU W.
National Laboratory for Infrared Physics, ShanghaiInstitute of Technical Physics, Chinese Academy of
FU Y.
Laboratory of Physical Electronics and Photonics, MC2, Department of Physics, Fysikgrand 3, Universi
TAN H.H.
Department of Electronic Material Engineering, Research shcool of Physical and Engineering, The Aust
ZOU J.
Electron Microscope Unit and Australian Key Center for Microscopy and Microanalysis, The University
Li Z.f.
National Laboratory For Infrared Physics Shanghaiinstitute Of Technical Physics Chinese Academy Of S
Tan H.h.
Department Of Electronic Material Engineering Research Shcool Of Physical And Engineering The Austra
Liu X.q.
National Laboratory For Infrared Physics Shanghaiinstitute Of Technical Physics Chinese Academy Of S
Zou J.
Electron Microscope Unit And Australian Key Center For Microscopy And Microanalysis The University O
Fu Y
Laboratory Of Physical Electronics And Photonics Mc2 Department Of Physics Fysikgrand 3 University O
Liu X.
National Laboratory for Infrared Physics, ShanghaiInstitute of Technical Physics, Chinese Academy of Science
Li Z.
National Laboratory for Infrared Physics, ShanghaiInstitute of Technical Physics, Chinese Academy of Science

Investigation of AlGaAs/GaAs V-grooved Quantum Wire Inrared Photodetector Structures

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