Phase-change characteristics and crystal structure in multi stacked GeTe/InTe films
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Kim Ki-Hong
AE group, Corporate Technology Operations SAIT, Samsung Electronics Co., Ltd., Yongin 446-712, Republic of Korea
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Lee Jun-Ho
AE group, Corporate Technology Operations SAIT, Samsung Electronics Co., Ltd., Yongin 446-712, Republic of Korea
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Kyoung Yong-Koo
AE Group, Corporate Technology Operations SAIT, Samsung Electronics Co., Ltd., Yongin, Gyeonggi 446-712, Republic of Korea
関連論文
- Phase-change characteristics and crystal structure in multi stacked GeTe/InTe films
- Nitrogen-Doping Effect on Ge2Sb2Te5 Chalcogenide Alloy Films during Annealing
- Changes in Chemical and Structural Properties of Phase-Change Material GeTe with Nitrogen Doping and Annealing