Kim Ki-Hong | AE group, Corporate Technology Operations SAIT, Samsung Electronics Co., Ltd., Yongin 446-712, Republic of Korea
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概要
- Kim Ki-Hongの詳細を見る
- 同名の論文著者
- AE group, Corporate Technology Operations SAIT, Samsung Electronics Co., Ltd., Yongin 446-712, Republic of Koreaの論文著者
関連著者
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Kim Ki-Hong
AE group, Corporate Technology Operations SAIT, Samsung Electronics Co., Ltd., Yongin 446-712, Republic of Korea
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Lee Jun-Ho
AE group, Corporate Technology Operations SAIT, Samsung Electronics Co., Ltd., Yongin 446-712, Republic of Korea
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Chung Jae-Gwan
AE group, Corporate Technology Operations SAIT, Samsung Electronics Co., Ltd., Yongin 446-712, Republic of Korea
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Park Ju-Cheol
Research Institute for Advanced Materials, Seoul National University, Seoul 151-744, Republic of Korea
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Heo Sung
AE group, Corporate Technology Operations SAIT, Samsung Electronics Co., Ltd., Yongin 446-712, Republic of Korea
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Choi Sang-Jun
System LSI, Samsung Electronics Co., Ltd., Yongin 446-712, Republic of Korea
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Ki-Hong Kim
AE Group, Corporate Technology Operations SAIT, Samsung Electronics Co., Ltd., Yongin 446-712, Republic of Korea
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Sung Heo
AE Group, Corporate Technology Operations SAIT, Samsung Electronics Co., Ltd., Yongin 446-712, Republic of Korea
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Jae-Gwan Chung
AE Group, Corporate Technology Operations SAIT, Samsung Electronics Co., Ltd., Yongin 446-712, Republic of Korea
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Choi Sang-Jun
Device Architecture Lab, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Yongin 446-712, Republic of Korea
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Jun-Ho Lee
AE Group, Corporate Technology Operations SAIT, Samsung Electronics Co., Ltd., Yongin 446-712, Republic of Korea
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Kyoung Yong-Koo
AE Group, Corporate Technology Operations SAIT, Samsung Electronics Co., Ltd., Yongin, Gyeonggi 446-712, Republic of Korea
著作論文
- Phase-change characteristics and crystal structure in multi stacked GeTe/InTe films
- Nitrogen-Doping Effect on Ge2Sb2Te5 Chalcogenide Alloy Films during Annealing
- Changes in Chemical and Structural Properties of Phase-Change Material GeTe with Nitrogen Doping and Annealing