Changes in Chemical and Structural Properties of Phase-Change Material GeTe with Nitrogen Doping and Annealing

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概要

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• In this study, changes in the chemical, structural, and electrical properties of undoped and 8.4 at. % nitrogen-doped GeTe films were investigated. The transition temperature of sheet resistance increased as a result of nitrogen doping, which corresponded well with phase transformations. The shift of chemical potential toward lower binding energies strongly depended on crystallization. The Ge/Te ratio showed a tendency to increase towards the surface only for undoped GeTe. Nitrogen doping may suppress the instability of GeTe.

• 2010-06-25

著者

• Kim Ki-Hong

  AE group, Corporate Technology Operations SAIT, Samsung Electronics Co., Ltd., Yongin 446-712, Republic of Korea

• Chung Jae-Gwan

  AE group, Corporate Technology Operations SAIT, Samsung Electronics Co., Ltd., Yongin 446-712, Republic of Korea

• Ki-Hong Kim

  AE Group, Corporate Technology Operations SAIT, Samsung Electronics Co., Ltd., Yongin 446-712, Republic of Korea

• Sung Heo

  AE Group, Corporate Technology Operations SAIT, Samsung Electronics Co., Ltd., Yongin 446-712, Republic of Korea

• Jae-Gwan Chung

  AE Group, Corporate Technology Operations SAIT, Samsung Electronics Co., Ltd., Yongin 446-712, Republic of Korea

• Choi Sang-Jun

  Device Architecture Lab, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Yongin 446-712, Republic of Korea

• Jun-Ho Lee

  AE Group, Corporate Technology Operations SAIT, Samsung Electronics Co., Ltd., Yongin 446-712, Republic of Korea

関連論文

• Phase-change characteristics and crystal structure in multi stacked GeTe/InTe films
• Nitrogen-Doping Effect on Ge2Sb2Te5 Chalcogenide Alloy Films during Annealing
• Changes in Chemical and Structural Properties of Phase-Change Material GeTe with Nitrogen Doping and Annealing

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