Nitrogen-Doping Effect on Ge2Sb2Te5 Chalcogenide Alloy Films during Annealing

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概要

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• The microstructural and electrical-property changes of undoped and 5.4% nitrogen-doped Ge2Sb2Te5 were investigated. The transition temperature of sheet resistance increased owing to nitrogen doping, which corresponded well with the observed phase-change states. The lattice parameters of the undoped and nitrogen-doped Ge2Sb2Te5 exhibited the same tendency of decrease with increasing annealing temperature. Considering the increase in the Ge2Sb2Te5 energy state owing to the presence of interstitial nitrogen, the increase in the crystallization temperature is contrary to the thermodynamic viewpoint. Nitrogen atoms and N2 gas can be located at the interstitial site without distorting the crystal structure.

• 2010-10-25

著者

• Kim Ki-Hong

  AE group, Corporate Technology Operations SAIT, Samsung Electronics Co., Ltd., Yongin 446-712, Republic of Korea

• Park Ju-Cheol

  Research Institute for Advanced Materials, Seoul National University, Seoul 151-744, Republic of Korea

• Lee Jun-Ho

  AE group, Corporate Technology Operations SAIT, Samsung Electronics Co., Ltd., Yongin 446-712, Republic of Korea

• Chung Jae-Gwan

  AE group, Corporate Technology Operations SAIT, Samsung Electronics Co., Ltd., Yongin 446-712, Republic of Korea

• Heo Sung

  AE group, Corporate Technology Operations SAIT, Samsung Electronics Co., Ltd., Yongin 446-712, Republic of Korea

• Choi Sang-Jun

  System LSI, Samsung Electronics Co., Ltd., Yongin 446-712, Republic of Korea

関連論文

• Phase-change characteristics and crystal structure in multi stacked GeTe/InTe films
• Nitrogen-Doping Effect on Ge2Sb2Te5 Chalcogenide Alloy Films during Annealing
• Changes in Chemical and Structural Properties of Phase-Change Material GeTe with Nitrogen Doping and Annealing

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