Carrier transport and photodetection in heterojunction photodiodes comprising n-type silicon and p-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite films
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概要
- 論文の詳細を見る
- Institute of Physicsの論文
- 2014-04-23
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関連論文
- Heterojunction Diodes Comprised of n-Type Silicon and p-Type Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite
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- Formation of p-Type Semiconducting Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films by Boron Doping
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- Near-Edge X-ray Absorption Fine-Structure, X-ray Photoemission, and Fourier Transform Infrared Spectroscopies of Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films
- Enhanced Growth of Diamond Grains in Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films by Pulsed Laser Deposition with Boron-Blended Graphite Targets
- Boron-Induced Dramatically Enhanced Growth of Diamond Grains in Nanocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films Deposited by Coaxial Arc Plasma Deposition
- Effects of Aluminum Incorporation on Diamond Grain Growth in Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films Prepared by Coaxial Arc Plasma Deposition
- p-Type Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films Prepared by Pulsed Laser Deposition and Their Application to Photodetectors
- Carrier transport and photodetection in heterojunction photodiodes comprising n-type silicon and p-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite films