Mn-Doped Zn
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概要
- 論文の詳細を見る
20--100 nm thin films of silver were first deposited on quartz glass by magnetron sputtering. These specimens were then annealed at 500 °C for 15 min by rapid thermal annealing (RTA), which might change the silver films into having a morphology of nano islands. Subsequently, a thin film of Mn-doped ZnO was deposited on the above specimens in a sputtering system. These specimens were removed from the sputtering system and annealed again in an atmospheric furnace at 1200 °C for 2 h. By X-ray diffraction (XRD) analysis, the annealed samples were identified as Mn-doped Zn<inf>2</inf>SiO<inf>4</inf>crystals. Furthermore, photoluminescence (PL) measurement showed the 530 nm (green light) fluorescence. The silver nano islands embedded in the Mn-doped Zn<inf>2</inf>SiO<inf>4</inf>crystals tended to show an increase in PL intensity in the following order and in increase rate composed with their pristine Mn-doped Zn<inf>2</inf>SiO<inf>4</inf>counterpart: 100 nm Ag (-0.33%), 50 nm Ag (-0.02%), 20 nm Ag (87.4%), 40 nm Ag (124.3%), and 30 nm Ag (168.5%). Accordingly, the plasmon effect may lead to the enhancement of fluorescence, and the size of silver nano islands determines the increase rate.
- 2013-11-25
著者
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Liu Shiu-jen
Department Of Elctrophysics National Chiao Tung University
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Peng Kun-Cheng
Department of Materials Engineering, Ming Chi University of Technology, New Taipei City 24301, Taiwan
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Lee Chun-Ying
Department of Mechanical Engineering, National Taipei University of Technology, Taipei 10608, Taiwan
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Liu Shiu-Jen
Department of Mathematics and Science (Pre-college), National Taiwan Normal University, New Taipei City 24449, Taiwan
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Lin Yi-Chung
Department of Materials Engineering, Ming Chi University of Technology, New Taipei City 24301, Taiwan
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Chen Tai-Er
Department of Materials Engineering, Ming Chi University of Technology, New Taipei City 24301, Taiwan
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