Influence of Oxygen Vacancies on Transport Properties of La2/3Ca1/3MnO3-y Films Grown on SrTiO3 Substrates
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概要
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We prepared La2/3Ca1/3MnO3-y films with various oxygen contents on SrTiO3 substrates and measured the temperature-dependent resistivity of the manganite films under tensile stress due to the lattice mismatch between manganites and single-crystal substrates. The effect of oxygen vacancies on the transport properties of the films was investigated. The experimental results reveal that the dependence of temperature on the resistivity of fully oxygenated films can be attributed to the adiabatic small-polaron conduction and unconventional one-magnon scattering at temperatures above and far below the insulator–metal (I–M) transition temperature, respectively. However, for highly oxygen-deficient films, the temperature-dependent resistivity can be ascribed to Mott's variable-range-hopping and small polaron metallic conduction at temperatures above and far below the I–M transition temperature, respectively.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-10-15
著者
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Juang Jenh-yih
Department Of Elctrophysics National Chiao Tung University
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Gou Yi-shun
Department Of Elctrophysics National Chiao Tung University
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Liu Shiu-jen
Department Of Elctrophysics National Chiao Tung University
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Uen Tseng-ming
Department Of Elctrophysics National Chiao Tung University
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Wu Kaung-hsiung
Department Of Elctrophysics National Chiao Tung University
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Lin Jiunn-Yun
Institute of Physics, National Chiao Tung University, Hsinchu, Taiwan 300, R.O.C.
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Gou Yi-Shun
Department of Physics, National Taiwan Normal University, Taipei, Taiwan 106, R.O.C.
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Chen Shyh-Fen
Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan 300, R.O.C.
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Juang Jenh-Yih
Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan 300, R.O.C.
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Liu Shiu-Jen
Department of Materials Engineering, Mingchi University of Technology, Taishan, Taipei, Taiwan 243, R.O.C.
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Wu Kaung-Hsiung
Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan 300, R.O.C.
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