Growth and Transport Properties of (110)-Oriented La2/3Sr1/3MnO3 Thin Films on TiO2-Buffered Si (100) Substrates

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概要

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• The growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-buffered silicon substrates by pulsed-laser deposition are reported. An insulator-metal transition associated with a ferromagnetic transition was observed at about 360 K. Magnetic measurements showed that in-plane coercive fields are about 60 Oe and 300 Oe at 300 K and 5 K, respectively. A magnetoresistance with a $\Delta\rho/\rho(H=0)$ ratio of $-20$% in a magnetic field of 5 T was observed not only near the insulator-metal transition temperature but also below 30 K. Moreover, a $T^{2}$- to $T^{3}$-dependence crossover of resistivity was observed around 60 K, indicating that an unconventional one-magnon scattering may have occurred.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2003-03-15

著者

• Chen Shyh-feng

  Department Of Elctrophysics National Chiao Tung University

• Lin Jiunn-yuan

  Institute Of Physics National Chiao Tung University

• Juang Jenh-yih

  Department Of Elctrophysics National Chiao Tung University

• Gou Yi-shun

  Department Of Elctrophysics National Chiao Tung University

• Liu Shiu-jen

  Department Of Elctrophysics National Chiao Tung University

• Uen Tseng-ming

  Department Of Elctrophysics National Chiao Tung University

• Wu Kaung-hsiung

  Department Of Elctrophysics National Chiao Tung University

• Uen Tseng-Ming

  Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan 300, R.O.C.

• Lin Jiunn-Yuan

  Institution of Physics, National Chiao Tung University, Hsinchu, Taiwan 300, R.O.C.

• Chen Shyh-Feng

  Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan 300, R.O.C.

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