Growth of GaN Columns and Microstructures on (111) Si by Using Ge Layer via Metal Organic Chemical Vapor Deposition
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概要
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We demonstrate the successful growth of GaN columnar and microdisk structures on a (111) Ge/Si substrate via metal organic chemical vapor deposition. X-ray diffraction and energy disperse spectroscopy results reveal that the well aligned GaN nanocolumnar structures are grown on a Si substrate by using the Ge layer. The relatively higher growth temperature induces a change in surface morphology of GaN from columnar to microdisk structures. The possible growth mechanism of columnar structured GaN was considered from the Ga-metal/Ge eutectic materials system.
- 2013-08-25
著者
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Yoon Euijoon
Department Of Materials Science And Engineering And Inter-university Semiconductor Research Center S
-
Kim Jong
Department Of Agricultural Bio-resources National Academy Of Agricultural Science Rural Development
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PARK Jinsub
Department of Electronic Engineering, Hanyang University
-
Kim Jong
Department of Materials Science and Engineering, College of Engineering, Seoul National University, Seoul 151-742, Republic of Korea
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Shin Keun
Department of Materials Science and Engineering, College of Engineering, Seoul National University, Seoul 151-742, Republic of Korea
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